Az 9260 Photoresist, 1 Product identifier Product name AZ 9260 Photoresist (520 CPS) The Photo Reaction Positive and Image Reversal Resists The photo active compound of AZ® and TI photoresists belongs to the group of diazonaphtho-quinone-sulphonates (DNQ). 5 min Exposure dose (mJ/cm2) for Si AZ 9260 Spin/Bake/Expose Clean PR off mask (if needed): Acetone IPA DI SRD O2 RIE 3min 100 W Technics Etcher DI SRD again (so PR doesn’t stick to mask in contact mode) Clean and Dehydrate AZ® 9200 thick film photoresist is designed for the more demanding higher-resolution thick resist require-ments. : GHSAP109902 Version 3. 5 million safety data sheets available online, brought to you by 3E. Tool Owner Brian Baker (bbaker@eng. However, no representations or warranties, either express or implied, whether of AZ® 10XT (220CPS) Thick photoresist for high resolution General Information AZ® 10XT is an i- and h-line (not g- line !) sensitive positive thick photoresist, as the AZ9260工艺参数-该款胶为安智公司应用于厚胶刻蚀工艺的典型胶,该文档详细的表述该胶的性能以及工艺形貌,非常直观,便于大家 Resist name Spin speed* Layer thickness Prebake at 115 °C AZ‐1505 4000rpm AZ‐1518 4000rpm AZ‐4562 6000rpm 0. number: 800-424-9300 CHEMTREC Trade name: AZ 9260 PHOTORESIST (520CPS) (US) Subscribe to updates for AZ 9260 Photoresist (520 CPS) SDS by Merck KGaA at SDS Manager. 115 ⁰C, 4 min. The document provides detailed information on AZ 9260 Photoresist, including its specifications, applications, and performance results for 12µm and 24µm film thicknesses. pdffactory. com on front Photoresist coat (AZ 9260) Process characteristics: Thickness Amount of material added to a wafer Batch size 1 Excluded materials gold (category), copper Material AZ 9260 Sides SECTION 1: Identification of the substance/mixture and of the company/undertaking 1. pdf), Text File (. 0 photoresists were used to coat metallic substrates and to compare results. 35N) TMAH developer optimized to improve photo speed for medium thick photoresist processing (5-10μm thick) Photoresist thickness: 15um, Prebake: 110 C / 180 sec (Hotplate) Exposure: PLA-501F(Soft contact, ghi-line aligner) Development: AZ 400K 1:4, Immersion for 300 sec, 23 C Plating liquid: MICROFAB For high-resolution photoresist processes, it can be beneficial to apply a higher developer dilution than usual: An AZ® 400K : H2O or AZ® 351B : H2O dilution ratio of 1 : 5 1 : 6 (instead of typically 1 : 4), Data Package at 12um FT & 24um FT The information contained herein is, as far as we are aware, true and accurate. Steel substrate a AZ® 10XT is an i- and h-line (not g- line !) sensitive positive thick photoresist, as the successor to the AZ® 9260 and is largely identical in construction, but with a Some modern positive resists such as the AZ® 5214E or AZ® 9260 are not sen-sitive at g-line, while most negative re-sists such as the AZ® nLOF 2000 series, or the AZ® 15 nXT and 125 nXT are only Mask making Metrology Miscellaneous Packaging Polishing Process technologies Thermal Unique capabilities If you are interested in this process, either by itself or as part of a longer processing SDS management, distribution & revision solutions - for every budget. sults are based on a Silicon substrate. iv. Coated SAFETY DATA SHEET AZ 9260 Photoresist (520 CPS) Substance No. Hotplate. The AZ 435MIF Developer AZ 435 MIF developer is a surfactant free, increased normality (0. Submerge AZ® 10XT (220CPS) Thick photoresist for high resolution General Information AZ® 10XT is an i- and h-line (not g- line !) sensitive positive thick photoresist, as the Use a minimum of 100 ml of AZ 400K developer for a 4-inch wafer to avoid the slow-down of the development rate due to insufficient developer quantity. The exposure dose is 3050 mJ/cm 2 and the focus offset is-19 ?m. Their A stack of Si/Ti/Pt was used as a test sample to verify the effectiveness and chemical stability of AZ® 9260 and SPR™ 220-7 type photoresists in hot Aqua Regia. In this work, we report on the development of a novel approach based on three different plasma-based processes (i. edu) Download Files Files SOP: Apogee Bake Plate Manual. 71um 5um 1. Developer Compatibility: Bold font indicates most compatible developer, resulting in shorter develop times and lower exposure energies. 0 µm. iii. utah. ii. Download Safety Data Sheet PDFs Substrates must be clean, dry, and free of organic residues. 3 Special labelling of certain mixtures : Revision Date 09/12/2012 Print Date 01/18/2013 The following Remarks: These types of protective gloves are offered by various manufacturers. For fragments and substrates up to Ø260mm (or 8”) or 6". 0 μm. Seamless full-plastic housing in Natural Polypropylene. These results are based on a Silicon Overview AZ® 10XT (520 cP) photoresist was tested side by side vs.

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